Sandeep Kumar

研究業績リスト（2022年4月18日更新）

　学術論文 Journals　
　国際会議一般講演 Contributed International Conference Presentations　
　国内会議・研究会一般講演 Contributed Japanese Domestic Conference Presentations

学術論文
Journals

• S. Kumar, H. Murakami, Y. Kumagai, and M. Higashiwaki, "Vertical β-Ga₂O₃ Schottky barrier diodes with trench staircase field plate," Appl. Phys. Express vol. 15, pp. 054001 (2022).

• S. Kumar, T. Kamimura, C.-H. Lin, Y. Nakata, and M. Higashiwaki, "Reduction in leakage current through interface between Ga₂O₃ epitaxial layer and substrate by ion implantation doping of compensating impurities," Appl. Phys. Lett. vol. 117, pp. 193502 (2020).

• S. Kumar, R. Soman, A. S. Pratiyush, R. Muralidharan, and D. N. Nath. "A Performance Comparison Between β-Ga₂O₃ and GaN HEMTs." IEEE Transactions on Electron Devices 66, no. 8 (2019): 3310-3317.
• A. S. Pratiyush, U. U. Muazzam, S. Kumar, P. Vijayakumar, S. Ganesamoorthy, N. Subramanian, R. Muralidharan, and D. N. Nath. "Optical Float-Zone Grown Bulk β-Ga₂O₃-Based Linear MSM Array of UV-C Photodetectors." IEEE Photonics Technology Letters 31, no. 12 (2019): 923-926.
• S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath. "Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si." IEEE Transactions on Electron Devices 66, no. 3 (2019): 1230-1235.
• S. Kumar, A. S. Pratiyush, S. B. Dolmanan, H. R. Tan, S. Tripathy, R. Muralidharan, and D. N. Nath. "Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al_xGa_1–xN/GaN High Electron Mobility Transistor Structures on Si (111)." ACS Applied Electronic Materials 1, no. 3 (2019): 340-345.

• N. Remesh, N. Mohan, S. Kumar, S. Prabhu, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath. "Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model." IEEE Transactions on Electron Devices 66, no. 1 (2018): 613-618.
• A. S. Pratiyush, Z. Xia, S. Kumar, Y. Zhang, C. Joishi, R. Muralidharan, S. Rajan, and D. N. Nath. "MBE-Grown β-Ga₂O₃-Based Schottky UV-C Photodetectors With Rectification Ratio ~10⁷." IEEE Photonics Technology Letters 30, no. 23 (2018): 2025-2028.
• H. Chandrasekar, S. Kumar, K. L. Ganapathi, S. Prabhu, S. B. Dolmanan, S. Tripathy, S. Raghavan, K. N. Bhat, S. Mohan, R. Muralidharan, and N. Bhat. "Dielectric Engineering of HfO₂ Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates." IEEE Transactions on Electron Devices 65, no. 9 (2018): 3711-3718.
• A. S. Pratiyush, S. Krishnamoorthy, S. Kumar, Z. Xia, R. Muralidharan, S. Rajan, and D. N. Nath. "Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector." Japanese Journal of Applied Physics 57, no. 6 (2018): 060313.

• S. Kumar, A. S. Pratiyush, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath. "UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio >10⁷." Applied Physics Letters 111, no. 25 (2017): 251103.
• S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath. "Temperature and bias dependent trap capture cross section in AlGaN/GaN HEMT on 6-in silicon with carbon-doped buffer." IEEE Transactions on Electron Devices 64, no. 12 (2017): 4868-4874.
• S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath. "Interface traps at Al₂O₃/InAlN/GaN MOS-HEMT-on-200 mm Si." Solid-State Electronics 137 (2017): 117-122.

国際会議一般講演
Contributed International Conference Presentations

• (Oral) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and V_th>5V”, Electronic Materials Conferences (EMC), 2019
• (Poster) S. Kumar, A. S. Pratiyush, R. Muralidharan, and D. N. Nath,“β-Ga₂O₃ Versus GaN HEMTs—A Closer Look”, International Conference on Nitride Semiconductors (ICNS), 2019
• (Poster) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and V_th>5V”, International Conference on Nitride Semiconductors (ICNS), 2019

• (Oral) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and V_th>5V”, IEEE-International Conference on Emerging Electronics (ICEE), 2018.
• (Oral) S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath, “Investigation of Ta₂O₅ as a promising high k dielectric for InAlN/GaN-on-Si HEMT”, International Workshop on Nitride Semiconductors (IWN), 2018.
• (Poster) S. Kumar, A. S. Pratiyush, S. B. Dolmanan, and S. Tripathy, R. Muralidharan, and D. N. Nath, “UV-A detector based on gate-recessed InAlN/GaN-on-silicon HEMT stack”, International Workshop on Nitride Semiconductors (IWN), 2018.
• (Poster) S. Kumar, A. S. Pratiyush, R. Muralidharan, and D. N. Nath, “Performance comparison of β-Ga₂O₃ and GaN HEMTs”, International Workshop on Nitride Semiconductors (IWN), 2018
• (Poster, late news) S. Kumar, S. Vura, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, D. N. Nath, “Normally-Off AlGaN/GaN HEMT on 200 mm Silicon with ON-Current 500 mA/mm and V_th>5V”, International Workshop on Nitride Semiconductors (IWN), 2018.
• (Oral) S. Kumar, H. Kumar, S. Vura, A. S. Pratiyush, V. S. Charan, S. B. Dolmanan, S. Tripathy, R. Muralidharan, and D. N. Nath, “Investigation of Ta₂O₅ as a promising high k dielectric for InAlN/GaN-on-Si HEMT”, Lester Eastman Conference/US ​Workshop on Gallium Oxide(LEC/GOX), 2018

• (Oral) S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath,”Capture cross-section estimation of traps in AlGaN/GaN HEMT on Silicon”, International Workshop on Physics of Semiconductor Devices (IWPSD), 2017
• (Poster) S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath”, Investigation of Al₂O₃/InAlN/GaN-on-Si HEMT by Capacitance Dispersion Technique, International Conference on Nitride Semiconductors (ICNS), 2017.
• (Poster) S. Kumar, A. S. Pratiyush, S. B. Dolmanan, and S. Tripathy, R. Muralidharan, and D. N. Nath, “Optically switched gate-less normally-off III-nitride HEMT”, International Conference on Nitride Semiconductors (ICNS), 2017.
• (Poster) S. Kumar, P. Gupta, I. Guiney, C. J. Humphreys, S. Raghavan, R. Muralidharan, and D. N. Nath, “Temperature dependent capacitance-voltage spectroscopy of AlGaN/GaN HEMT-on-Si with a C-doped buffer”, International Conference on Nitride Semiconductors (ICNS), 2017.
• (Oral) S. Kumar, N. Remesh, S. B. Dolmanan, S. Tripathy, S. Raghavan, R. Muralidharan, and D. N. Nath, “Interface traps at Al₂O₃/InAlN/GaN HEMT-on-200 mm Si”, International Conference on Materials for Advanced Technologies (ICMAT), 2017.

国内会議・研究会一般講演
Contributed Japanese Domestic Conference Presentations

• Sandeep Kumar, Takafumi Kamimura, Chia-Hung Lin, Yoshiaki Nakata, and Masataka Higashiwak："Reduction of leakage current through interface between Ga₂O₃ epitaxial layer and substrate by Mg/ Fe implantation"、第81回応用物理学会秋季学術講演会、オンライン (Zoom)、2020年9月8-11日.