Zhenwei Wang

研究業績リスト（2022年2月15日更新）

List of Publications (updated 2022/2/15)

　学術論文 Journals　
　国際会議一般講演 Contributed International Conference Presentations
　国内会議・研究会一般講演 Contributed Japanese Domestic Conference Presentations

学術論文
Journals

• Zhenwei Wang, D. Takatsuki, J. Liang, T. Kitada, N. Shigekawa, and M. Higashiwaki, "Fabrication of n-Si/n-Ga₂O₃ heterojunctions by surface-activated bonding and their electrical properties," J. Appl. Phys. vol. 131, pp. 074501 (2022).

• Zhenwei Wang, F. H. Alshammari, H. Omran, M. K. Hota, H. A. Al-Jawhari, K. N. Salama, and H. N. Alshareef, "All-oxide thin film transistors and rectifiers enabling on-chip capacitive energy storage," Adv. Electron. Mater. vol. 5, pp. 1900531 (2019).
• M. K. Hota, Q. Jiang, Zhenwei Wang, Z. L. Wang, K. N. Salama, and H. N. Alshareef, "Integration of electrochemical microsupercapacitors with thin film electronics for on-chip energy storage," Adv. Mater. vol. 31, pp. 1807450 (2019).
• X. Xu, Zhenwei Wang, S. Lopatin, M. A. Quevedo-Lopez, and H. N. Alshareef, "Wafer scale quasi single crystalline MoS₂ realized by epitaxial phase conversion," 2D Mater. vol. 6, pp. 015030 (2019).
• H. Kim, Zhenwei Wang, H. N. Alshareef, "MXetronics: Electronic and photonic applications of MXenes," Nano Energy vol. 60, pp. 179 (2019).

• X. Guan, Zhenwei Wang (co-1st author), M. K. Hota, H. N. Alshareef, and T. Wu, "P-type SnO thin film phototransistor with perovskite-mediated photogating," Adv. Electron. Mater. vol. 4, pp. 1800538 (2018).
• Z. Kan, Zhenwei Wang (co-1st author), Y. Firdaus, M. Babics, H. N. Alshareef, and P. Beaujuge, "Atomic-layer-deposited AZO outperforms ITO in high-efficiency polymer solar cells," J. Mater. Chem. vol. 6, pp. 10716 (2018).
• Zhenwei Wang, H. Kim, and H. N. Alshareef, "Oxide thin film electronics using all-MXene electrical contacts," Adv. Mater. vol. 30, pp. 1706656 (2018).

• Zhenwei Wang, X. He, X. X. Zhang, and H. N. Alshareef, "Hybrid van der Waals SnO/MoS₂ heterojunction for thermal and optical sensing applications," Adv. Electron. Mater. vol. 3, pp. 1700396 (2017).
• Z. Dai, Zhenwei Wang (co-1st author), X. He, X. X. Zhang, and H. N. Alshareef, "Fully-transparent circuit based on chemical vapor deposited large-area MoS₂ and oxide contacts," Adv. Funct. Mater. vol. 27, pp. 1703119 (2017).
• F. H. Alshammari, M. K. Hota, Zhenwei Wang, H. A. Al-Jawhari, and H. N. Alshareef, "Atomic-layer-deposited SnO₂ as gate electrode for indium-free transparent electronics," Adv. Electronic Mater. vol. 3, pp. 1700155 (2017).
• H. Kim, Zhenwei Wang, M. N. Hedhili, N. Wehbe, and H. N. Alshareef, "Oxidant-dependent thermoelectric properties of undoped ZnO films by atomic layer deposition," Chem. Mater. vol. 29, pp. 2794 (2017).
• A. Giugni, B. Torre, M. Allione, G. Das, Zhenwei Wang, X. He, H. N. Alshareef, and E. D. Fabrizio, "Experimental route to scanning probe hot electron nanoscopy applied to 2D material," Adv. Opt. Mater. vol. 5, pp. 1700195 (2017).
• S. Al-Shehri, N. Al-Senany, R. Altuwirqi, A. Bayahya, F. Al-Shammari, Zhenwei Wang, and H. Al-Jawhari, "Green synthesis of Cu_xO nanoscale MOS capacitors processed at low temperatures," Surf. Coat. Technol. vol. 320, 246 (2017).

• Zhenwei Wang, P. K. Nayak, J. A. Caraveo-Frescas, and H. N. Alshareef, "Recent developments in p-type oxide semiconductor materials and devices," Adv. Mater. vol. 28, pp. 3831 (2016).
• Zhenwei Wang, X. He, X. X. Zhang, and H. N. Alshareef, "Hybrid van der Waals p–n heterojunctions based on SnO and 2D MoS₂," Adv. Mater. vol. 28, pp. 9133 (2016).
• P. K. Nayak, Zhenwei Wang (co-1st author), and H. N. Alshareef, "Indium-free fully transparent electronics deposited entirely by atomic layer deposition," Adv. Mater. vol. 28, pp. 7736 (2016).
• J. H. Park, F. H. Alshammari, Zhenwei Wang, and H. N. Alshareef, "Interface engineering for precise threshold voltage control in multilayer-channel thin film transistors," Adv. Mater. Interfaces vol. 3, pp. 1600713 (2016).
• F. H. Alshammari, P. K. Nayak, Zhenwei Wang, and H. N. Alshareef, "Enhanced ZnO thin-film transistor performance using bilayer gate dielectrics," ACS Appl. Mater. Interfaces vol. 8, pp. 22751 (2016).
• A. Albar, Zhenwei Wang, H. N. Alshareef, and U. Schwingenschlögl, "Formation of metallic states between insulating SnO and SnO₂, Adv. Mater. Interfaces vol. 3, pp. 1500334 (2016).

• Zhenwei Wang, P. K. Nayak, A. Albar, N. Wei, U. Schwingenschlögl, and H. N. Alshareef, "Transparent SnO–SnO₂ p–n junction diodes for electronic and sensing applications," Adv. Mater. Interfaces vol. 2, pp. 1500374 (2015).
• Zhenwei Wang, H. A. Al-Jawhari, P. K. Nayak, J. A. Caraveo-Frescas, N. Wei, M. N. Hedhili, and H. N. Alshareef, "Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer," Sci. Rep. vol. 5, pp. 9617 (2015).
• P. K. Nayak, Zhenwei Wang, D. H. Anjum, M. N. Hedhili, and H. N. Alshareef, "Highly stable thin film transistors using multilayer channel structure," Appl. Phys. Lett.vol. 106, pp. 103505 (2015).
• P. K. Nayak, J. A. Caraveo-Frescas, Zhenwei Wang, M. N. Hedhili, and H. N. Alshareef, "Six-fold mobility improvement of indium-zinc oxide thin-film transistors using a simple water treatment," Adv. Electronic Mater. vol. 1, pp. 1500014 (2015).

• P. K. Nayak, J. A. Caraveo-Frescas, Zhenwei Wang, M. N. Hedhili, Q. X. Wang, and H. N. Alshareef, "Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer," Sci. Rep. vol. 4, pp. 4672 (2014).
• H. Ping, Y. Chen, H. Guo, Zhenwei Wang, D. Zeng, L. Wang, and D.-L. Peng, "A facile solution approach for the preparation of Ag@Ni core-shell nanocubes," Mater. Lett. vol. 116, pp. 239 (2014).

• X. Wen, X. X. Zhang, Y. Zhang, G. H. Yue, J. B. Wang, Zhenwei Wang, and D. L. Peng, "Structure and magnetic properties of the Co_xPt_100-x nanowire Arrays," Appl. Phys. A: Mater. Sci. Process. vol. 112, pp. 869 (2013).
• D. Peng, J. Wang, L. Wang, X. Liu, Zhenwei Wang, and Y. Chen, "Electron transport properties of magnetic granular films," Sci. China: Phys., Mech. Astron. vol. 56, pp. 15 (2013).
• K. Lin, L. Wang, Zhenwei Wang, R. Wen, Y. Chen, and D. Peng, "Gas-phase synthesis and magnetism of HfO₂ nanoclusters," Eur. Phys. J. D vol. 67, pp. 42 (2013).
• H. Guo, N. Lin, Y. Chen, Zhenwei Wang, Q. Xie, T. Zheng, N. Gao, S. Li, J. Kang, D. Cai, and D.-L. Peng, "Copper nanowires as fully transparent conductive electrodes," Sci. Rep. vol. 3, pp. 2323 (2013).
• H. Geng, J. Q. Wei, Zhenwei Wang, S. J. Nie, H. Z. Guo, L. S. Wang, Y. Chen, G. H. Yue, and D. L. Peng, "Soft magnetic property and high-frequency permeability of [Fe₈₀Ni₂₀-O/TiO₂]_n multilayer thin films," J. Alloys Compd. vol. 576, pp. 13 (2013)f.
• H. Geng, J. Q. Wei, S. J. Nie, Y. Wang, Zhenwei Wang, L. S. Wang, Y. Chen, D. L. Peng, F. S. Li, and D. S. Xue, "[Fe₈₀Ni₂₀-O/SiO₂]_n multilayer fhin films for applications in GHz range," Mater. Lett. vol. 92, pp. 346 (2013).

国際会議一般講演
Contributed International Conference Presentations

• Zhenwei Wang, "Wafer-scale processed graphene-based gas sensors enhanced by Cu_xO NPs", "Au NPs decorated ZnO NWs for gas sensing applications", ACBD, Okinawa Japan, 2019: Poster.

• Zhenwei Wang, "Hybrid van der Waals p-n Heterojunctions based on p-type SnO and MoS₂", 2017 MRS Fall Meeting, Boston, USA: Oral #NM 04.07.12.
• Zhenwei Wang, "Large-area chemical vapor deposited MoS₂ with transparent conducting oxide contacts toward fully transparent 2D electronics," 2017 MRS Fall Meeting, Boston, USA: Oral #NM 04.07.08.

• Zhenwei Wang, "Indium-free fully transparent oxide electronics entirely by atomic layer deposition", TCM 2016, Chania, Greece: Oral #O-1808.
• Zhenwei Wang, "Hybrid van der Waals p–n heterojunctions based on SnO and 2D MoS₂," TCM 2016, Chania, Greece: Poster.
• Zhenwei Wang, "Indium-free fully transparent oxide electronics entirely by atomic layer deposition," IEEE student poster competition on Electronics Photonics and Energy, KAUST, Saudi Arabia: Poster.

• Zhenwei Wang, "Gate-bias stress stability improvement of TFTs using ZnO/HfO₂ multilayer channel structure," IMRC 2015, Cancun, Mexico: Oral #S7D-0014.
• Zhenwei Wang, "Transparent All Tin Oxides based p-n Diode Thermometer," IMRC 2015, Cancun Mexico. Oral presentation #S7D-0028.

• Zhenwei Wang, "Low temperature processed all tin oxides based complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer," 2014 MRS Fall Meeting, Boston, USA: Oral #O10.04.

国内会議・研究会一般講演
Contributed Japanese Domestic Conference Presentations

• Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, Masataka Higashiwaki："Electrical characteristics of n-Ga₂O₃/n-Si heterojunction formed by surface-activated bonding"、第82回応用物理学会秋季学術講演会、オンライン (Zoom)、2021年9月10-13日.