LSD = 0.75 µm）でfT = 237 GHz、fmax = 287 GHz（Vds = 3.0 V、Vgs = 0.4 V）を得るとともに、MIS若しくはMES構造のいずれにおいても基板材料による高周波特性には差がなく、ほぼ同等のfT及びfmaxを得られることが分かった。また、GaN基板上MIS型HEMT（Lg = 45 nm、Wg = 50 µm×2、LSD = 0.75 µm）の周波数70 GHzにおける出力特性についても測定し、約15mW（ゲート幅1 mmあたり0.32W）の出力電力を得た。高周波計測技術として、VNA及び周波数エクステンダ（最大測定可能周波数1100 GHz = 1.1 THz）を用いたSパラメータ測定、アンテナ放射パターン測定について概説するとともに、ミリ波・テラヘルツ波帯における誘電特性評価として自由空間Sパラメータ法によるInP基板、PTFEフィルム、PSフィルムの比誘電率を60～220 GHzで測定した。この結果、開発したミリ波・テラヘルツ波帯材料評価システムにおいて、複数の周波数帯での誘電率測定が可能であること、厚さが数10 µm～数mmの材料の比誘電率の測定が可能であることを明らかにした。今後、5G及び5G以降の次世代移動体通信システム（Beyond 5Gなど）におけるミリ波・テラヘルツ波帯の利活用のため、GaN-HEMTなどの化合物半導体電子デバイスの更なる高性能化や集積化、光デバイスとの融合技術の確立を目指すとともに、ミリ波・テラヘルツ波帯で動作する超高速無線通信モジュールの性能やモジュール構成材料の誘電特性などを高精度で測定可能な高周波計測技術の確立を目指す。謝辞本研究開発の一部は総務省「電波資源拡大のための研究開発（JPJ000254）」により実施された。【参考文献【1A. Endoh et al., “Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs,” Proc. IPRM2001, pp.448–451, 2001.2K. 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