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Inoue, “Small valence band offset of h-BN/Al0.7Ga0.3N heterojunction measured by Xray photoelectron spectroscopy,” Appl. Phys. Lett., vol.114, 011603, 2019.井上振一郎　（いのうえ　しんいちろう）未来ICT研究所深紫外光ICTデバイス先端開発センターセンター長博士（工学）ナノ光エレクトロニクス814-2-1　深紫外固体光源デバイス技術の研究開発