Successful Development of World’s First Vertical Ga2O3 Transistor through Low-Cost, Highly-Manufacturable Ion Implantation Doping Process
December 12, 2018
National Institute of Information and Communications Technology
Tokyo University of Agriculture and Technology
![Fig. 1 (a) Cross-sectional schematic and (b) plan-view optical micrograph of the vertical Ga2O3 MOSFET. Fig. 1 (a) Cross-sectional schematic and (b) plan-view optical micrograph of the vertical Ga2O3 MOSFET.](img/20181212-01.png)
![Fig. 2 (a) DC output and (b) transfer characteristics of the vertical Ga2O3 MOSFET. Fig. 2 (a) DC output and (b) transfer characteristics of the vertical Ga2O3 MOSFET.](img/20181212-02.png)
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References
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Masataka Higashiwaki
Green ICT Device Advanced Development Center
Advanced ICT Research Institute
National Institute of Information and Communications Technology
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Tokyo University of Agriculture and Technology
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