Successful Development of World’s First Vertical Ga2O3 Transistor through Low-Cost, Highly-Manufacturable Ion Implantation Doping Process
December 12, 2018
National Institute of Information and Communications Technology
Tokyo University of Agriculture and Technology


Publication Information
References
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Masataka Higashiwaki
Green ICT Device Advanced Development Center
Advanced ICT Research Institute
National Institute of Information and Communications Technology
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Yoshinao Kumagai
Department of Applied Chemistry
Tokyo University of Agriculture and Technology
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